Influence of substrate temperature on structure, stoichiometry, and energy band gap of Zn1-xMgxO thin films deposited by pulsed laser deposition

被引：2
|
作者：
Patel, Vikas A. [1 ,2 ]
Patel, Basumati H. [1 ,2 ]
机构：
[1] Sophisticated Instrumentat Ctr Appl Res & Testing, Vallabh Vidyanagar, Gujarat, India
[2] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar, Gujarat, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 12期
关键词：
Zn1-xMgxO thin film; Pulse laser deposition technique; Different substrate temperatures; Energy band gap engineering; PHASE EPITAXIAL-GROWTH; OPTICAL-PROPERTIES; TRANSPARENT;
D O I：
10.1007/s00339-022-06275-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transition metal oxides have captivated extensive courtesy owing to their excellent light harvesting abilities in UV-region for production of opto-electronic devices. Herein, we report the deposition of Zn1 - xMgxO thin film by pulse laser deposition (PLD) technique. Subsequently, the influence of substrate temperature on deposited thin film has been studied in detail. All the deposited thin films have highly crystallographic c-oriented hexagonal (wurtzite) structure with (002) most prominent orientation. Systematic study on variation of stoichiometry of Zn1 - xMgxO thin film on changing substrate temperature has been accomplished. Significant improvement in the crystallinity of deposited film has been observed as the substrate temperature increases. Energy band gap value of Zn1 - xMgxO thin film has been engineered significantly from 3.34 to 3.69 eV by changing the substrate temperature. Finally, the present findings on tunability of crystallinity and energy band gap find huge development in producing high-performance opto-electronic devices.
引用
收藏
页数：7
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