Influence of substrate temperature on structure, stoichiometry, and energy band gap of Zn1-xMgxO thin films deposited by pulsed laser deposition

被引：2
|
作者：
Patel, Vikas A. [1 ,2 ]
Patel, Basumati H. [1 ,2 ]
机构：
[1] Sophisticated Instrumentat Ctr Appl Res & Testing, Vallabh Vidyanagar, Gujarat, India
[2] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar, Gujarat, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 12期
关键词：
Zn1-xMgxO thin film; Pulse laser deposition technique; Different substrate temperatures; Energy band gap engineering; PHASE EPITAXIAL-GROWTH; OPTICAL-PROPERTIES; TRANSPARENT;
D O I：
10.1007/s00339-022-06275-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transition metal oxides have captivated extensive courtesy owing to their excellent light harvesting abilities in UV-region for production of opto-electronic devices. Herein, we report the deposition of Zn1 - xMgxO thin film by pulse laser deposition (PLD) technique. Subsequently, the influence of substrate temperature on deposited thin film has been studied in detail. All the deposited thin films have highly crystallographic c-oriented hexagonal (wurtzite) structure with (002) most prominent orientation. Systematic study on variation of stoichiometry of Zn1 - xMgxO thin film on changing substrate temperature has been accomplished. Significant improvement in the crystallinity of deposited film has been observed as the substrate temperature increases. Energy band gap value of Zn1 - xMgxO thin film has been engineered significantly from 3.34 to 3.69 eV by changing the substrate temperature. Finally, the present findings on tunability of crystallinity and energy band gap find huge development in producing high-performance opto-electronic devices.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] Influence of substrate temperature on structure, stoichiometry, and energy band gap of Zn1 − xMgxO thin films deposited by pulsed laser deposition
    Vikas A. Patel
    Basumati H. Patel
    Applied Physics A, 2022, 128
  • [2] Effect of substrate annealing on the quality of pulsed laser deposited Zn1-xMgxO thin films
    Shukla, Gaurav
    Khare, Alika
    APPLIED SURFACE SCIENCE, 2009, 255 (15) : 7017 - 7020
  • [3] Growth of Zn1-xMgxO films by pulsed laser deposition
    Zou, Lu
    Ye, Zhizhen
    Huang, Jingyun
    Zhao, Binghui
    2002, Science Press (23):
  • [4] Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition
    Matsubara, K
    Tampo, H
    Shibata, H
    Yamada, A
    Fons, P
    Iwata, K
    Niki, S
    APPLIED PHYSICS LETTERS, 2004, 85 (08) : 1374 - 1376
  • [5] Effects of deposition temperature on the properties of Zn1-xMgxO thin films
    Hwang, DK
    Jeong, MC
    Myoung, JM
    APPLIED SURFACE SCIENCE, 2004, 225 (1-4) : 217 - 222
  • [6] Zn1-xMgxO thin films deposited by spray pyrolysis
    Sahal, M.
    Mari, B.
    Mollar, M.
    Manjon, F. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 9, 2010, 7 (09):
  • [7] Structural and optical properties of Zn1-xMgxO films grown by pulsed laser deposition
    Krishnaprasad, P. S.
    Ragitha, E. K.
    Jayaraj, M. K.
    ADVANCES IN THIN-FILM COATINGS FOR OPTICAL APPLICATIONS V, 2008, 7067
  • [8] Epitaxial Zn1-xMgxO films grown on (111) Si by pulsed laser deposition
    Pan, X. H.
    Guo, W.
    Ye, Z. Z.
    Liu, B.
    Che, Y.
    Nelson, C. T.
    Zhang, Y.
    Tian, W.
    Schlom, D. G.
    Pan, X. Q.
    CHEMICAL PHYSICS LETTERS, 2010, 485 (4-6) : 363 - 366
  • [9] Influence of fabrication technique on structure and photoluminescence of Zn1-xMgxO thin films
    Wang Wei-Na
    Fang Qing-Qing
    Zhou Jun
    Wang Sheng-Nan
    Yan Fang-Liang
    Liu Yan-Mei
    Li Yan
    Lue Qing-Rong
    ACTA PHYSICA SINICA, 2009, 58 (05) : 3461 - 3467
  • [10] Effect of Mg doping and substrate temperature on the properties of pulsed laser deposited epitaxial Zn1−xMgxO thin films
    Gaurav Shukla
    Alika Khare
    Applied Physics A, 2009, 96 : 713 - 719
12345