The investigation of GaInP solar cell grown by all-solid MBE

被引：23

作者：

Dai, P. ^{[1
]}

Lu, S. L. ^{[1
]}

Zhu, Y. Q. ^{[1
]}

Ji, L. ^{[1
]}

He, W. ^{[1
]}

Tan, M. ^{[1
]}

Yang, H. ^{[1
]}

Arimochi, M. ^{[2
]}

Yoshida, H. ^{[2
]}

Uchida, S. ^{[2
]}

Ikeda, M. ^{[2
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China

[2] Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Molecular beam epitaxy; Semiconducting III-V materials; Solar cells; HIGH-EFFICIENCY GAAS; GA0.5IN0.5P;

D O I：

10.1016/j.jcrysgro.2012.12.038

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the study of GaInP solar cell grown by solid-state molecular beam epitaxy (MBE) on GaAs. The effect of growth temperature on the device performance is investigated. Under the standard one-sun air-mass 1.5 global (AM1.5G) illumination, an efficiency of 16.6% has been obtained for GaInP single-junction solar cell grown at a high temperature. A worse device performance is observed with decreasing growth temperature. Temperature-dependent and time-resolved photoluminescence results demonstrate that the GaInP optical quality is greatly improved in the case of a high growth temperature. A long PL decay time of GaInP/AlInP structure indicates that AlInP is more promising as the back surface field for the future solar cell performance improvement. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：604 / 606

页数：3

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