18.5% efficient graphene/GaAs van der Waals heterostructure solar cell

被引：187

作者：

Li, Xiaoqiang ^{[1
]}

Chen, Wenchao ^{[1
]}

Zhang, Shengjiao ^{[1
]}

Wu, Zhiqian ^{[1
]}

Wang, Peng ^{[1
]}

Xu, Zhijuan ^{[1
]}

Chen, Hongsheng ^{[1
,2
]}

Yin, Wenyan ^{[1
]}

Zhong, Huikai ^{[1
]}

Lin, Shisheng ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China

来源：

NANO ENERGY | 2015年 / 16卷

基金：

中国国家自然科学基金;

关键词：

Graphene; GaAs; van der Waals Schottky diode; Solar cell; THEORETICAL SIMULATION; ITERATIVE SCHEME; OXIDE; PERFORMANCE; FABRICATION; FILMS; LIMIT;

D O I：

10.1016/j.nanoen.2015.07.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High efficient solar cell is highly demanded for sustainable development of human society, leading to the cutting-edge research on various types of solar cells. The physical picture of graphene/semiconductor van der Waals Schottky diode is unique as Fermi level of graphene can be tuned by gate structure relatively independent of semiconductor substrate. However, the reported gated graphene/semiconductor heterostructure has power conversion efficiency (PCE) normally less than 10%. Herein, utilizing a designed graphene-dielectric-graphene gating structure for graphene/GaAs heterojunction, we have achieved solar cell with PCE of 18.5% and open circuit voltage of 0.96 V. Drift-diffusion simulation results agree well with the experimental data and predict this device structure can work with a PCE above 23.8%. This research opens a door of high efficient solar cell utilizing the graphene/semiconductor heterostructure. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：310 / 319

页数：10

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