A Hybrid Silicon-AlGaInAs Phase Modulator

被引：42

作者：

Chen, Hui-Wen ^{[1
]}

Kuo, Ying-Hao ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 21-24期

关键词：

Hybrid integrated circuits; modulation; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LPT.2008.2004790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a carrier depletion phase modulator based on the hybrid silicon evanescent platform. A low temperature and robust bonding process is employed to transfer III-V epitaxial layers to patterned silicon waveguides. An external electric field is applied across the doped multiple quantum wells so that carriers are depleted, resulting in an index change. The device has a voltage-length product, V-pi L, of 4 V-mm at 1550 nm. An optical bandwidth of 100 nm with an extinction ratio over 10 dB is achieved. The device can handle optical power up to 28 mW.

引用

页码：1920 / 1922

页数：3

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