TIVA and SEI developments for enhanced front and backside interconnection failure analysis

被引：40

作者：

Cole, EI ^{[1
]}

Tangyunyong, P ^{[1
]}

Benson, DA ^{[1
]}

Barton, DL ^{[1
]}

机构：

[1] Sandia Natl Labs, Elect Qual Reliabil Ctr, Albuquerque, NM 87185 USA

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期

关键词：

D O I：

10.1016/S0026-2714(99)00136-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermally-induced Voltage Alteration (TIVA) and Seebeck Effect Imaging (SEI) are newly developed techniques for localizing shorted and open conductors from the front and backside of an IC. Recent improvements have greatly increased the sensitivity of the TIVA/SEI system, reduced the acquisition times by more than 20X, and localized previously unobserved defects. The system improvements, non-linear response of IC defects to heating, modeling of laser heating and examples using the improved system are presented. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：991 / 996

页数：6