Tensile strain-induced formation of micro-cracks for AlGaN/GaN heterostructures

被引：8

作者：

Kotani, Junji ^{[1
]}

Tomabechi, Shuichi ^{[1
]}

Miyajima, Toyoo ^{[1
]}

Nakamura, Norikazu ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Watanabe, Keiji ^{[1
]}

Imanishi, Kenji ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期

关键词：

AlGaN/GaN heterostructure; surface morphology; tensile stress; dislocations; DISLOCATIONS; GAN;

D O I：

10.1002/pssc.201200627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigated the effect of tensile strain in Al-GaN barrier layer on the formation of micro-cracks at the surface of AlGaN/GaN HEMT structures. The Al0.2Ga0.8N/GaN HEMT structures were cooled down under N-2 + NH3 and H-2 + NH3 environments and high-density micro-cracks were found only for the latter case, indicating that hydrogen etching is essential for crack formation. On the other hand, no micro-cracks were observed even for H-2 + NH3 cooling for thick AlGaN bulk layer. These results clearly correlate the tensile strain in the epitaxial layer and the formation of micro-cracks. Cross-sectional TEM analysis unveiled that screw/mixed dislocations were responsible for the formation of micro-cracks. It is believed that etching preferably starts from the dislocations and propagates along the crystal planes with the help of the tensile strain in the epitaxial layers. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：808 / 811

页数：4

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