Dithiazole-fused naphthalene diimides toward new n-type semiconductors

被引：48

作者：

Chen, Xin ^{[1
]}

Guo, Yunlong ^{[1
]}

Tan, Luxi ^{[1
]}

Yang, Ge ^{[1
]}

Li, Yonghai ^{[1
]}

Zhang, Guanxin ^{[1
]}

Liu, Zitong ^{[1
]}

Xu, Wei ^{[1
]}

Zhang, Deqing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Organ Solids Lab, Beijing 100190, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2013年 / 1卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; SINGLE-CRYSTALLINE TRANSISTORS; HIGH-PERFORMANCE; ORGANIC SEMICONDUCTOR; ANISOTROPIC TRANSPORT; CORE; ELECTRON; DESIGN; DERIVATIVES;

D O I：

10.1039/c2tc00308b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple synthetic approach to dithiazole-fused naphthalene diimides 1 and 2 from 2,6-dibromoNDI (2BrNDI) was described. Note that the synthesis did not involve any metallic catalysts. Based on their cyclic voltammograms, the LUMO energies of 1 and 2 were estimated to be -3.99 eV and -3.98 eV, respectively, being lower than that of unsubstituted NDI. Thin films of 1 and 2 show n-type semiconducting behaviors. OFETs of 1 exhibit electron mobility up to 0.15 cm(2) V-1 s(-1) with high on/off ratio (under ambient conditions) after annealing.

引用

页码：1087 / 1092

页数：6

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