A Story Told by a Single Nanowire: Optical Properties of Wurtzite GaAs

被引：102

作者：

Ahtapodov, Lyubomir ^{[1
]}

Todorovic, Jelena ^{[2
]}

Olk, Phillip ^{[1
]}

Mjaland, Terje ^{[1
]}

Slattnes, Patrick ^{[1
]}

Dheeraj, Dasa L. ^{[1
]}

van Helvoort, Antonius T. J. ^{[2
]}

Fimland, Bjorn-Ove ^{[1
]}

Weman, Helge ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

[2] Norwegian Univ Sci & Technol, Dept Phys, NO-7491 Trondheim, Norway

来源：

NANO LETTERS | 2012年 / 12卷 / 12期

关键词：

Nanowires; wurtzite GaAs; optical properties; photoluminescence; TEM; Au-assisted MBE growth; PHOTOLUMINESCENCE;

D O I：

10.1021/nl3025714

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The optical properties of the wurtzite (WZ) GaAs crystal phase found in nanowires (NWs) are a highly controversial topic. Here, we study high-quality pure WZ GaAs/AlGaAs core-shell NWs grown by Au-assisted molecular beam epitaxy (MBE) with microphotoluminescence spectroscopy (mu-PL) and (scanning) transmission electron microscopy on the very same single wire. We determine the room temperature (294 K) WZ GaAs bandgap to be 1.444 eV, which is similar to 20 meV larger than in zinc blende (ZB) GaAs, and show that the free exciton emission at 15 K is at 1.516 eV. On the basis of time- and temperature-resolved mu-PL results, we propose a Gamma(8) conduction band symmetry in WZ GaAs. We suggest a method for quantifying the optical quality of NWs, taking into consideration the difference between the room and low temperature integrated PL intensity, and demonstrate that Au-assisted GaAs/AlGaAs core-shell NWs can have high PL brightness up to room temperature.

引用

页码：6090 / 6095

页数：6

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