Magnetic-field-driven metal-insulator transition in magnetic semiconductor (Ga,Mn)As

被引：0

作者：

Hayashi, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Yoshida, S ^{[1
]}

Katsumoto, S ^{[1
]}

Iye, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator transition (MIT) in a diluted magnetic semiconductor (Ga,Mn)As is studied in detail. The material parameters were finely tuned by repeated low temperature annealing and finally the MIT was driven by external magnetic. field. The temperature dependence in the vicinity of the transition was T-1/4 and the two-parameter scaling scheme was successfully applied to obtain the exponent 1.6 +/- 0.2.

引用

页码：254 / 255

页数：2

共 50 条

[31] Magnetic flux driven crossover between critical ensembles at the metal-insulator transition
Zharekeshev, I. Kh.
BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2012, 1 (65): : 20 - 26
[32] Complete scaling analysis of the metal-insulator transition in Ge:Ga:: Effects of doping-compensation and magnetic field
Itoh, KM
Watanabe, M
Ootuka, Y
Haller, EE
Ohtsuki, T
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2004, 73 (01) : 173 - 183
[33] Critical exponents for the metal-insulator transition of 70Ge:Ga in magnetic fields
Watanabe, M
Itoh, KM
Morishita, M
Ootuka, Y
Haller, EE
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 152 - 153
[34] Ferromagnetism and the metal-insulator transition in the magnetic semiconductor system FexMn1−xS
G. V. Loseva
L. I. Ryabinkina
A. D. Balaev
Physics of the Solid State, 1998, 40 : 250 - 251
[35] Ferromagnetism and the metal-insulator transition in the magnetic semiconductor system FexMn1-xS
Loseva, GV
Ryabinkina, LI
Balaev, AD
PHYSICS OF THE SOLID STATE, 1998, 40 (02) : 250 - 251
[36] Metal-insulator transition in two-dimensional system in zero magnetic field
Pudalov, VM
USPEKHI FIZICHESKIKH NAUK, 1998, 168 (02): : 227 - 231
[37] METAL-INSULATOR TRANSITION IN COMPENSATED GALLIUM-ARSENIDE IN A MAGNETIC-FIELD
ZAVARITS.EI
VORONOVA, ID
ROZHDEST.NV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 992 - 994
[38] Metal-insulator transition induced by the magnetic field in n-type GaSb
Ghezzi, C
Magnanini, R
Parisini, A
SOLID STATE COMMUNICATIONS, 2005, 136 (02) : 126 - 131
[39] Magnetoresistance and magnetic field induced metal-insulator transition in intercalated amorphous carbon
Kumari, L
Subramanyam, SV
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 129 (1-3): : 48 - 53
[40] Anomalous magnetic and transport properties of InSb(Mn) crystals near metal-insulator transition
Obukhov, S. A.
Makarova, T. L.
Lahderanta, E.
Zakharchuk, I. A.
Panysheva, T. Yu.
AIP ADVANCES, 2018, 8 (10)

← 1 2 3 4 5 →