Effects of the ambience gas of the buffer layers on the microstructural and optical properties of ZnO films grown on Si substrates

被引：0

作者：

Park, TE ^{[1
]}

Cho, HK ^{[1
]}

机构：

[1] Dong A Univ, Pusan 604714, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 47卷

关键词：

ZnO; sputtering; buffer layer; in-situ annealing;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effects of the gas ambience and the in-situ thermal annealing of ZnO buffer layers on the structural and optical properties of ZnO films subsequently grown by magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown in gas ambiences of mixed Ar/O-2 and the in-situ thermal treatment of the ZnO buffer layers improved the structural and optical properties. In addition, ZnO films on buffer layer thermal-annealed in N-2 gas ambience exhibited strong emission of the near band gap exciton with narrow linewidth on combining hightemperature growth of the ZnO.

引用

页码：S493 / S496

页数：4

共 14 条

[1] Effects of annealing on photoluminescence of ZnO thin film prepared by vapor phase growth [J].