Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films

被引：3

作者：

Il'ichev, E. A. ^{[1
]}

Kirilenko, E. P. ^{[1
]}

Petrukhin, G. N. ^{[1
]}

Rychkov, G. S. ^{[1
]}

Sakharov, O. A. ^{[1
]}

Khamdokhov, E. Z. ^{[1
]}

Chernyavskaya, E. S. ^{[1
]}

Shupegin, M. L. ^{[1
]}

Shchekin, A. A. ^{[1
]}

机构：

[1] Lukin State Res Inst Problems Phys, Moscow 103460, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2014年 / 40卷 / 01期

关键词：

Technical Physic Letter; Graphene Layer; Carbon Diffusion; Graphene Film; Nickel Carbide;

D O I：

10.1134/S1063785014010234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with significantly different diffusion coefficients, and subsequent phase transition from a carbon quasi-liquid to graphene layer.

引用

页码：52 / 54

页数：3

共 6 条

[1] Amorphous diamond film by enhanced are deposition [J].

Coll, BF ;

Chhowalla, M .

SURFACE & COATINGS TECHNOLOGY, 1996, 79 (1-3) :76-86

[2] AMORPHOUS SOLID SYSTEMS - DIAMOND-LIKE CARBON, CARBIDES, FILMS AND MULTILAYER STRUCTURES [J].

DORFMAN, VF ;

PYPKIN, BN .

SURFACE & COATINGS TECHNOLOGY, 1991, 48 (03) :193-198

[3] Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces [J].

Ismach, Ariel ;

Druzgalski, Clara ;

Penwell, Samuel ;

Schwartzberg, Adam ;

Zheng, Maxwell ;

Javey, Ali ;

Bokor, Jeffrey ;

Zhang, Yuegang .

NANO LETTERS, 2010, 10 (05) :1542-1548

[4]

Pypkin B. N., 1998, RF Patent, Patent No. [(19) RU (11) 2111292 (13) C 1, 2111292]

[5] Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate [J].

Rollings, E. ;

Gweon, G. -H. ;

Zhou, S. Y. ;

Mun, B. S. ;

McChesney, J. L. ;

Hussain, B. S. ;

Fedorov, An. ;

First, P. N. ;

de Heer, W. A. ;

Lanzara, A. .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 67 (9-10) :2172-2177

[6] Electronic structure of epitaxial graphene layers on SiC: Effect of the substrate [J].

Varchon, F. ;

Feng, R. ;

Hass, J. ;

Li, X. ;

Nguyen, B. Ngoc ;

Naud, C. ;

Mallet, P. ;

Veuillen, J.-Y. ;

Berger, C. ;

Conrad, E. H. ;

Magaud, L. .

PHYSICAL REVIEW LETTERS, 2007, 99 (12)

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