Fabrication of a transparent p-n heterojunction thin film diode composed of p-CuAlO2/n-ZnO

被引：31
|
作者：
Kim, Dae-Sung [1 ]
Park, Tae-Jin [1 ]
Kim, Dae-Hyun [1 ]
Choi, Se-Young [1 ]
机构：
[1] Yonsei Univ, Dept New Mat Sci & Engn, Seoul 120749, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 06期
关键词：
D O I：
10.1002/pssa.200622137
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An all-oxide transparent p-n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/p-CuAlO2/n-ZnO/In electrode on the glass substrate. The p-CuAlO2 thin film was deposited by e-beam evaporation, which was annealed by the wet-oxidation method. The p-n heterojunction thin film diode showed rectifying current-voltage characteristics, dominated in forward bias by the flow of space-charge-limited current. The ratio of forward current to the reverse current exceeded 40 within the range of applied voltages of -4.0 to +4.0 V and the turn-on voltage was 0.3 V. Optical transmission of the diode was about 40% in the visible range.
引用
收藏
页码：R51 / R53
页数：3
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