Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

被引：14

作者：

Korenev, V. V. ^{[1
,2
]}

Savelyev, A. V. ^{[1
,2
]}

Zhukov, A. E. ^{[1
,2
,3
]}

Omelchenko, A. V. ^{[1
,2
]}

Maximov, M. V. ^{[1
,2
,3
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

[2] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

MU-M; EMISSION; STATE; RELAXATION; INJECTION; POWER;

D O I：

10.1134/S1063782613100151

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

引用

页码：1397 / 1404

页数：8

共 36 条

[1]

Agrawal G. P., 1993, SEMICONDUCTOR LASERS, P58

[2] Two lasing thresholds in semiconductor lasers with a quantum-confined active region [J].