X-ray diffraction studies of the influence of substitutional carbon on Si/Ge interdiffusion in SiGe/Si superlattices

被引：0
|
作者：
Zaumseil, P [1 ]
Rücker, H [1 ]
机构：
[1] Inst Semicond Phys, DE-15230 Frankfurt, Germany
来源：
SOLID STATE PHENOMENA | 1999年 / 70卷
关键词：
silicon; double crystal diffractometry; SiGe interdiffusion;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We show that substitutional C enhances interdiffusion in SiGe heterostructures. Si/Ge interdiffusion was studied in SiGe(C)/Si(C) superlattice structures with different positions and concentrations of substitutional carbon in the temperature range 700 degrees C - 950 degrees C for Ge (about 20%) and carbon (0-0.5%) concentrations, which are relevant for SiGe(C) device applications. The observed enhanced diffusion of Ge by substitutional C is attributed to a perturbation of Si point defect densities due to outdiffusion of C from regions of high C concentration.
引用
收藏
页码：203 / 208
页数：6
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