Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy - art. no. 071903

被引：27
作者：
Chen, YH
Sun, J
Jin, P
Wang, ZG
Yang, Z
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2175489
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.
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