A. novel low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

被引：0
|
作者：
Wang, JP [1 ]
Lai, XQ [1 ]
Li, YS [1 ]
Zhang, J [1 ]
Guo, XF [1 ]
机构：
[1] Xidian Univ, Inst Elect, CAD, Xian 710071, Shaanxi, Peoples R China
来源：
2005 6th International Conference on ASIC Proceedings, Books 1 and 2 | 2005年
关键词：
CIRCUITS;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A novel high precision low-voltage low-power CMOS voltage reference operating in subthreshold region is presented. With a power supply voltage of LOV, the temperature coefficient of circuit designed with standard 0.5um CMOS technology is 66.7ppm/degrees C for a temperature range of -40 degrees C to 125 degrees C and an output voltage which is 225mV within +/- 1.4 %.The power supply current of the whole circuit is less than 4uA. A study of gate-source voltage behavior with respect to temperature in subthreshold MOSFETs is also presented.
引用
收藏
页码：419 / 422
页数：4
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