Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

被引：6

作者：

Yakushev, M. V. ^{[1
,2
,3
]}

Maiello, P. ^{[4
]}

Raadik, T. ^{[5
]}

Shaw, M. J. ^{[1
]}

Edwards, P. R. ^{[1
]}

Krustok, J. ^{[5
]}

Mudryi, A. V. ^{[1
,6
]}

Forbes, I. ^{[4
]}

Martin, R. W. ^{[1
]}

机构：

[1] Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[2] RAS, URFU, Ekaterinburg 620002, Russia

[3] RAS, Ural Branch, Ekaterinburg 620002, Russia

[4] Northumbria Univ, Northumbria Photovolta Applicat Ctr, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[5] Tallinn Univ Technol, EE-19086 Tallinn, Estonia

[6] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

来源：

ADVANCED MATERIALS AND CHARACTERIZATION TECHNIQUES FOR SOLAR CELLS II | 2014年 / 60卷

关键词：

Cu3BiS3; Thin films; Solar cells; Raman spectroscopy; Photoluminescence; Photoreflectance; DEPENDENCE; BANDS;

D O I：

10.1016/j.egypro.2014.12.359

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (E-gX = 1.24 eV and E-gY = 1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of E-gX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV. (C) 2014 The Authors. Published by Elsevier Ltd.

引用

页码：166 / 172

页数：7

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