Development and study of low-cost VACNT/PDMS stretchable and resistive strain sensor
被引:9
作者:
Braga, Thyago Santos
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机构:
Aeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Natl Inst Space Res, BR-12227010 Sao Jose Dos Campos, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Braga, Thyago Santos
[1
,3
]
Vieira, Nirton C. S.
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机构:
Univ Fed Sao Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Vieira, Nirton C. S.
[2
]
Antonelli, Eduardo
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机构:
Univ Fed Sao Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Antonelli, Eduardo
[2
]
Rosa, Filipe Menezes
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机构:
Natl Inst Space Res, BR-12227010 Sao Jose Dos Campos, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Rosa, Filipe Menezes
[3
]
Donadon, Mauricio Vicente
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Aeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Donadon, Mauricio Vicente
[1
]
Corat, Evaldo Jose
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机构:
Natl Inst Space Res, BR-12227010 Sao Jose Dos Campos, BrazilAeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
Corat, Evaldo Jose
[3
]
机构:
[1] Aeronaut Inst Technol, Dept Aeronaut, Sao Jose Dos Campos, Brazil
[2] Univ Fed Sao Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP, Brazil
[3] Natl Inst Space Res, BR-12227010 Sao Jose Dos Campos, Brazil
This study introduces fast manufactured (4-5 hours) vertical aligned carbon nanotubes/polydimethylsiloxane (VACNT/PDMS) stretchable sensor for aircraft structures and polymer composites. The VACNT growth method from thermal CVD with camphor and ferrocene precursors create a dense and homogeneous CNT structure with many ohmic conducting paths that surpass any more resistive tunneling phenomena. The extensive AC/DC piezoresistive performance investigation shows ohmic conduction. The VACNTs/PDMS sensor presented high linearity (r(2) = 0.99) under similar to 20 % strain with an average gauge factor of 3.28 at DC measurements and minor resistance variations (0.052 %) attributed to the copper terminals electrodeposition. An important feature is the resistance value compatible with conventional extensometry equipment. The DC gauge factor was similar to 60 % higher than the conventional metallic strain gauge allowing measurements within a wider strain range. (C) 2020 Elsevier B.V. All rights reserved.
机构:
Univ Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, MalaysiaUniv Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia
Min, S. Han
Asrulnizam, A. M.
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机构:
Sains USM, Collaborat Microelectron Design Excellence Ctr CE, Level 1,Block C 10, Bayan Lepas 11900, Pulau Pinang, MalaysiaUniv Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia
Asrulnizam, A. M.
Atsunori, M.
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机构:
Toyohashi Univ Technol, Dept Elect & Elect Informaiton Engn, Toyohashi, Aichi 4418580, JapanUniv Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia
Atsunori, M.
Mariatti, M.
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机构:
Univ Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, MalaysiaUniv Sains Malaysia, Engn Campus, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Pulau Pinang, Malaysia
机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Hu, Yougen
Zhao, Tao
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Zhao, Tao
Zhu, Pengli
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Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Zhu, Pengli
Zhang, Yuan
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机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Univ Sci & Technol China, Nanosci & Technol Inst, Suzhou 215123, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Zhang, Yuan
Liang, Xianwen
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机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Liang, Xianwen
Sun, Rong
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机构:
Chinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China
Sun, Rong
Wong, Ching-Ping
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong 999077, Hong Kong, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Technol, Guangdong Prov Key Lab Mat High Dens Elect Packag, Shenzhen 518055, Peoples R China