共 15 条
[4]
Lee CK, 2000, IEEE POWER ELECTRON, P27, DOI 10.1109/PESC.2000.878794
[5]
Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
[J].
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST,
2000,
:23-26
[9]
RAYNER G, 2000, MAT RES SOC SYMP P, V611
[10]
Roeder JF, 2000, ADV MATER OPT ELECTR, V10, P145, DOI 10.1002/1099-0712(200005/10)10:3/5<145::AID-AMO416>3.0.CO