Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

被引：11
|
作者：
Grosse, P
Basset, G
Calvat, C
Couchaud, M
Faure, C
Ferrand, B
Grange, Y
Anikin, M
Bluet, JM
Chourou, K
Madar, R
机构：
[1] CEA, LETI, Dept Optron, F-38054 Grenoble 9, France
[2] Inst Natl Polytech Grenoble, ENSPG, UMR CNRS 5628, Lab Mat & Genie Phys, F-38402 St Martin Dheres, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
graphite purity; GDMS; silicon carbide; SIMS;
D O I：
10.1016/S0921-5107(98)00445-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectroscopy (GDMS) analysis have been performed to study the purity of the graphite at different stages of the thermal treatment and to study the transfer of impurities into the grown crystals. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：58 / 62
页数：5
相关论文
共 50 条
  • [41] Spin-lattice relaxation in aluminum-doped semiconducting 4H and 6H polytypes of silicon carbide
    Hartman, J. Stephen
    Berno, Bob
    Hazendonk, Paul
    Hens, Philip
    Ye, Eric
    Bain, Alex D.
    SOLID STATE NUCLEAR MAGNETIC RESONANCE, 2012, 45-46 : 45 - 50
  • [42] Interaction of 6H-type Stacking Faults with Threading Screw Dislocations in PVT-grown 4H-SiC Single Crystals
    Sato, S.
    Fujimoto, T.
    Tsuge, H.
    Katsuno, M.
    Ohashi, W.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 411 - 414
  • [43] Electrochemistry of anodic etching of 4H and 6H-SiC in fluoride solution of pH 3
    van Dorp, D. H.
    Sattler, J. J. H. B.
    den Otter, J. H.
    Kelly, J. J.
    ELECTROCHIMICA ACTA, 2009, 54 (26) : 6269 - 6275
  • [44] On peculiarities of defect formation in 6H-SiC bulk single crystals grown by PVT method
    Emelchenko, G. A.
    Zhokhov, A. A.
    Tartakovskii, I. I.
    Maksimov, A. A.
    Steinman, E. A.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 43 - 47
  • [45] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals
    Gao, B.
    Kakimoto, K.
    JOURNAL OF CRYSTAL GROWTH, 2014, 392 : 92 - 97
  • [46] Defects analysis in single crystalline 6H-SiC at different PVT growth stages
    Wang, SZ
    He, JB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 83 (1-3): : 8 - 12
  • [47] Comparative study on mechanical properties of three different SiC polytypes (3C, 4H and 6H) under high pressure: First-principle calculations
    Peivaste, I.
    Alahyarizadeh, Gh
    Minuchehr, A.
    Aghaie, M.
    VACUUM, 2018, 154 : 37 - 43
  • [48] Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer
    Ohno, T
    Yamaguchi, H
    Kuroda, S
    Kojima, K
    Suzuki, T
    Arai, K
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 1 - 7
  • [49] Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
    Steiner, Johannes
    Wellmann, Peter J.
    MATERIALS, 2022, 15 (05)
  • [50] The effects of atomic arrangements on mechanical properties of 2H, 3C, 4H and 6H-SiC
    Yang, Bo
    Deng, Qibo
    Su, Yang
    Peng, Xianghe
    Huang, Cheng
    Lee, Alamusi
    Hu, Ning
    COMPUTATIONAL MATERIALS SCIENCE, 2022, 203
12345