Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

被引：11
|
作者：
Grosse, P
Basset, G
Calvat, C
Couchaud, M
Faure, C
Ferrand, B
Grange, Y
Anikin, M
Bluet, JM
Chourou, K
Madar, R
机构：
[1] CEA, LETI, Dept Optron, F-38054 Grenoble 9, France
[2] Inst Natl Polytech Grenoble, ENSPG, UMR CNRS 5628, Lab Mat & Genie Phys, F-38402 St Martin Dheres, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
graphite purity; GDMS; silicon carbide; SIMS;
D O I：
10.1016/S0921-5107(98)00445-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectroscopy (GDMS) analysis have been performed to study the purity of the graphite at different stages of the thermal treatment and to study the transfer of impurities into the grown crystals. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：58 / 62
页数：5
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