Phase transition in sputtered HfO2 thin films: A qualitative Raman study

被引：14
|
作者：
Belo, G. S. [1 ]
Nakagomi, F. [2 ]
Minko, A. [1 ]
da Silva, S. W. [2 ]
Morais, P. C. [2 ]
Buchanan, D. A. [1 ]
机构：
[1] Univ Manitoba, Winnipeg, MB R3T 5V6, Canada
[2] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF, Brazil
来源：
APPLIED SURFACE SCIENCE | 2012年 / 261卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
High-kappa; Dielectrics; Hafnium dioxide; Sputtering; Raman scattering; GATE DIELECTRICS; SILICON; OXIDES; CMOS; RELIABILITY; INTEGRATION; ZIRCONIA; GROWTH; LIMITS;
D O I：
10.1016/j.apsusc.2012.08.088
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfOx films sputtered from an Hf target exhibit a tetragonal phase, which may be due to a crystallite size effect. However, the as-deposited HfOx films from the HfO2 target is found to be amorphous. As these films are annealed, these films remain or begin to become amorphous. However, at 600 degrees C they both begin to crystallize into a stable monoclinic phase. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：727 / 729
页数：3
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