Phase transition in sputtered HfO2 thin films: A qualitative Raman study

被引：16

作者：

Belo, G. S. ^{[1
]}

Nakagomi, F. ^{[2
]}

Minko, A. ^{[1
]}

da Silva, S. W. ^{[2
]}

Morais, P. C. ^{[2
]}

Buchanan, D. A. ^{[1
]}

机构：

[1] Univ Manitoba, Winnipeg, MB R3T 5V6, Canada

[2] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF, Brazil

来源：

APPLIED SURFACE SCIENCE | 2012年 / 261卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

High-kappa; Dielectrics; Hafnium dioxide; Sputtering; Raman scattering; GATE DIELECTRICS; SILICON; OXIDES; CMOS; RELIABILITY; INTEGRATION; ZIRCONIA; GROWTH; LIMITS;

D O I：

10.1016/j.apsusc.2012.08.088

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work the results of Linear Raman Spectroscopy experiments on hafnium dioxide (HfO2) thin films deposited by magnetron sputtering using different deposition conditions and post-deposition annealing are reported. Raman bands were identified considering the active symmetry modes expected from a tetragonal or monoclinic phase. The as-deposited HfOx films sputtered from an Hf target exhibit a tetragonal phase, which may be due to a crystallite size effect. However, the as-deposited HfOx films from the HfO2 target is found to be amorphous. As these films are annealed, these films remain or begin to become amorphous. However, at 600 degrees C they both begin to crystallize into a stable monoclinic phase. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：727 / 729

页数：3

共 25 条

[1] LATTICE-DYNAMICS AND LIGHT-SCATTERING IN HAFNIA AND ZIRCONIA [J].