Improved flash cell performance by N2O annealing of interpoly oxide

被引：8

作者：

Jong, FC

Huang, TY

Chao, TS

Lin, HC

Leu, LY

Young, K

Lin, CH

Chiu, KY

机构：

[1] WINBOND ELECT CORP,HSINCHU 300,TAIWAN

[2] NATL NANO DEVICE LABS,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 07期

关键词：

D O I：

10.1109/55.596931

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved, The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

引用

页码：343 / 345

页数：3

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