Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

被引：37

作者：

Iwan, S. ^{[1
,2
]}

Bambang, S. ^{[2
]}

Zhao, J. L. ^{[3
]}

Tan, S. T. ^{[3
]}

Fan, H. M. ^{[4
]}

Sun, L. ^{[5
]}

Zhang, S. ^{[5
]}

Ryu, H. H. ^{[6
]}

Sun, X. W. ^{[3
]}

机构：

[1] FMIPA Univ Negeri Jakarta, FMIPA, Jurusan Fis, Jakarta 13220, Indonesia

[2] Univ Indonesia, FMIPA Ilmu Mat, Jakarta 10430, Indonesia

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[4] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[5] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[6] Inje Univ, Sch Nanoengn, Gimhae 621749, Gyeongnam, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 14期

关键词：

ZnO:Er; USP; n-ZnO:Er/p-Si heterojunctions; Room temperature; Photoluminescence; Electron impact excitation; THIN-FILMS; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; LUMINESCENCE; EXCITATION; ERBIUM; GAN;

D O I：

10.1016/j.physb.2012.03.072

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2721 / 2724

页数：4

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