Highly sensitive ion sensor based on the MOSFET-BJT hybrid mode of a gated lateral BJT

被引:7
作者
Yuan, Heng [1 ]
Kwon, Hyurk-Choon [1 ]
Kang, Byoung-Ho [2 ]
Kang, In-Man [3 ]
Kwon, Dae-Hyuk [4 ]
Kang, Shin-Won [3 ]
机构
[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
[2] Kyungpook Natl Univ, Ctr Funct Devices Fus Platform, Taegu 702701, South Korea
[3] Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Taegu 702701, South Korea
[4] Kyungil Univ, Dept Elect Engn, Gyeongsang 712701, South Korea
基金
新加坡国家研究基金会;
关键词
Gated lateral bipolar junction transistor; MOSFET-BJT hybrid; Ion sensor; Highly sensitive; High transconductance; High current gain; BIPOLAR-TRANSISTORS; PROTEIN-DETECTION; PH-ISFET; ARRAY;
D O I
10.1016/j.snb.2013.01.086
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this study, a highly sensitive ion sensor using a gated lateral bipolar junction transistor (BJT) was proposed and evaluated. The proposed device was developed using a semiconductor technology that combined the MOSFET and the BJT structures. We found that the sensitivity of the conventional semiconductor-based sensors has a large dependence on the transconductance of the device. Therefore, a MOSFET-BJT hybrid-mode-operated gated lateral BJT structure ion sensor was developed that has higher transconductance than MOSFET sensor devices. In order to confirm the characteristics of the sensor device, the V-G-I-E curve, transconductance, and current gain performance were evaluated and compared between the MOSFET mode and MOSFET-BJT hybrid mode. Then, ion detection experiments were performed using pH buffer solutions. The evaluation results indicated that the sensitivity of the MOSFET-BJT hybrid mode can be controlled by altering the base current and is higher (21.77 mu A/pH) than the sensitivity of the MOSFET mode, which is similar to the conventional MOSFET-structure-based ISFET (17.56 mu A/pH). Further, this study proved that in the MOSFET-BJT hybrid mode, the proposed device has higher transconductance and current gain characteristics. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:44 / 49
页数:6
相关论文
共 27 条
[1]   A CRITICAL-EVALUATION OF DIRECT ELECTRICAL PROTEIN-DETECTION METHODS [J].
BERGVELD, P .
BIOSENSORS & BIOELECTRONICS, 1991, 6 (01) :55-72
[2]   Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years [J].
Bergveld, P .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 88 (01) :1-20
[3]   Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET [J].
Chou, JC ;
Weng, CY .
MATERIALS CHEMISTRY AND PHYSICS, 2001, 71 (02) :120-124
[4]   Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs [J].
Dipalo, M. ;
Gao, Z. ;
Scharpf, J. ;
Pietzka, C. ;
Alomari, M. ;
Medjdoub, F. ;
Carlin, J. -F. ;
Grandjean, N. ;
Delage, S. ;
Kohn, E. .
DIAMOND AND RELATED MATERIALS, 2009, 18 (5-8) :884-889
[5]   Development of CNT-ISFET based pH sensing system using atomic force microscopy [J].
Dong, Zhuxin ;
Wejinya, Uchechukwu C. ;
Chalamalasetty, Siva Naga Sandeep .
SENSORS AND ACTUATORS A-PHYSICAL, 2012, 173 (01) :293-301
[6]   SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors [J].
Fernandes, Poornika G. ;
Stiegler, Harvey J. ;
Zhao, Mingyue ;
Cantley, Kurds D. ;
Obradovic, Borna ;
Chapman, Richard A. ;
Wen, Huang-Chun ;
Mahmud, Gazi ;
Vogel, Eric M. .
SENSORS AND ACTUATORS B-CHEMICAL, 2012, 161 (01) :163-170
[7]   A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
FUNG, CD ;
CHEUNG, PW ;
KO, WH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :8-18
[8]  
Huang Y., 2011, PROCEDIA ENG, V26, P1389
[9]   AN IMPROVED ANALYTICAL MODEL FOR COLLECTOR CURRENTS IN LATERAL BIPOLAR-TRANSISTORS [J].
JOARDAR, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) :373-382
[10]   Protein detection with a novel ISFET-based zeta potential analyzer [J].
Koch, S ;
Woias, P ;
Meixner, LK ;
Drost, S ;
Wolf, H .
BIOSENSORS & BIOELECTRONICS, 1999, 14 (04) :413-421