Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

被引：12

作者：

Hahn, Herwig ^{[1
]}

Alam, Assadullah ^{[2
]}

Heuken, Michael ^{[1
,2
]}

Kalisch, Holger ^{[1
]}

Vescan, Andrei ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, D-52074 Aachen, Germany

[2] Aixtron SE, D-52134 Herzogenrath, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; SURFACE PASSIVATION; GAN; PERFORMANCE; HEMT; HFO2;

D O I：

10.1088/0268-1242/27/6/062001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based metal insulator semiconductor heterostructure field effect transistors (MISHFETs) have shown great potential, recently. An elegant technological approach is presented to fabricate MISHFETs with the gate dielectric formed only in the gate region. Aluminium is deposited in the gate region, oxidized by an inductively coupled oxygen plasma, subsequently covered by the evaporated gate contact metal and finally lifted off, all using a single patterning step. The electrical properties of the dielectric fabricated in this manner can be enhanced by annealing. Leakage currents comparable to those of other dielectric deposition methods are achieved. A subthreshold swing below 80 mV dec(-1) indicates a high-quality interface.

引用

页数：5

共 26 条

[1] MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs [J].