Strain-induced suppression of spin splitting in asymmetric p-type quantum wells

被引：2

作者：

Mauritz, O ^{[1
]}

Ekenberg, U ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, DEPT PHYS, S-10044 STOCKHOLM, SWEDEN

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

envelope function approximation; gallium arsenide; indium arsenide; indium phosphide; quantum wells; semiconductor-semiconductor heterostructures;

D O I：

10.1016/0039-6028(96)00426-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The strain dependence of the spin splitting of hole subbands in an asymmetric quantum well is investigated. It is found that the spin splitting can be suppressed by both compressive and tensile strain. The maximum spin splitting occurs when the tensile strain is about one third of that required to make the two uppermost subbands coincide at k(parallel to)=0.

引用

页码：380 / 383

页数：4

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