Graphene synthesis by thermal chemical vapor deposition using solid precursor

被引：22

作者：

Ahmed, Mohsin ^{[1
]}

Kishi, Naoki ^{[1
]}

Sugita, Ryo ^{[1
]}

Fukaya, Akiji ^{[1
]}

Khatri, Ishwor ^{[1
]}

Liang, JianBo ^{[1
]}

Mominuzzaman, Sharif Mohammad ^{[2
]}

Soga, Tetsuo ^{[1
]}

Jimbo, Takashi ^{[3
]}

机构：

[1] Nagoya Inst Technol, Dept Frontier Mat, Nagoya, Aichi 4668555, Japan

[2] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

[3] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 06期

关键词：

LAYER GRAPHENE; SINGLE; FILMS;

D O I：

10.1007/s10854-013-1073-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report single layer to few layer graphene on polycrystalline nickel by chemical vapor deposition at ambient pressure using solid precursor, camphor. Investigating at a wide range of temperature, it was observed that 870 A degrees C is better for the deposition of single layer graphene on nickel substrate. The percentage of single layer on the substrate reduced significantly with decreasing the deposition temperature. The full width half maximum of the synthesized single layer graphene was 21 cm(-1) and Raman intensity ratio of 2D to G peak was almost nine. The film was transferred to insulating substrate and measured transmittance was 85 %. Raman spectroscopy, Raman mapping, SEM and UV-visible spectrometer measurement were performed for characterization.

引用

页码：2151 / 2155

页数：5

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