Benefits and limitations of unipolar barriers in infrared photodetectors

被引：39

作者：

Savich, G. R. ^{[1
]}

Pedrazzani, J. R. ^{[1
]}

Sidor, D. E. ^{[1
]}

Wicks, G. W. ^{[1
]}

机构：

[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

来源：

INFRARED PHYSICS & TECHNOLOGY | 2013年 / 59卷

关键词：

Unipolar barrier; Detector; Photodetector; nBn; Dark current;

D O I：

10.1016/j.infrared.2012.12.031

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

When properly employed, unipolar barriers can significantly improve the performance of infrared photodetectors; however, the barriers must be correctly engineered and properly located in the epitaxial structure in order for detectors to function optimally. Unipolar barrier concepts, design, and implementation in several device architectures are discussed. nBn and unipolar barrier photodiodes are demonstrated in the InAs materials system, and the limitations of unipolar barriers are considered. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：152 / 155

页数：4

共 4 条

[1] nBn detector, an infrared detector with reduced dark current and higher operating temperature [J].