Growth and characterization of β-Ga2O3 thin films on different substrates

被引：43

作者：

Hao, S. J. ^{[1
,2
]}

Hetzl, M. ^{[1
,2
]}

Schuster, F. ^{[1
,2
]}

Danielewicz, K. ^{[1
,2
]}

Bergmaier, A. ^{[3
]}

Dollinger, G. ^{[3
]}

Sai, Q. L. ^{[4
]}

Xia, C. T. ^{[4
]}

Hoffmann, T. ^{[1
,2
]}

Wiesinger, M. ^{[1
,2
]}

Matich, S. ^{[1
,2
]}

Aigner, W. ^{[1
,2
]}

Stutzmann, M. ^{[1
,2
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[3] Univ Bundeswehr Munchen, Inst Angew Phys & Messtech LRT2, Fak Luft & Raumfahrttech, D-85577 Neubiberg, Germany

[4] Chinese Acad Sci, Key Lab Mat High Power Laser, Shanghai Inst Opt & Fine Mech, Qinghe Rd 390, Shanghai 201800, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2019年 / 125卷 / 10期

关键词：

MOLECULAR-BEAM EPITAXY; GALLIUM OXIDE; CRYSTALLINE; FABRICATION; DEPOSITION; BANDGAP; LAYER;

D O I：

10.1063/1.5061794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

b-Ga2O3 thin films were grown on the substrates of sapphire, GaN, and single crystals of beta-Ga2O3, using plasma-assisted molecular beam epitaxy. By varying deposition conditions, pure-phase epitaxial beta-Ga2O3 thin films were obtained, and the crystal quality of the as-grown films was optimized. A systematic characterization and a detailed analysis were performed on the films, including the nucleation process, surface morphology, crystal quality, thermal stability, as well as electrical and optical properties. Optical absorption was investigated using photothermal deflection spectroscopy, which provides detailed information about sub-gap optical absorption. Photocurrent measurements indicated a pronounced persistent photo-conductivity of beta-Ga2O3. A blue-UV emission with an energy of 3-3.5 eV was observed by cathodoluminescence spectroscopy. The Fermi level position of the as-grown film was determined based on temperature-dependent electrical conductivity measurements. It is proposed that oxygen vacancies in the film form a defect band at around Ec-0.8 eV that pins the Fermi level and is related to the observed photocurrent and cathodoluminescence characteristics.

引用

页数：9

共 45 条

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