Nitrogen-doped nickel oxide thin films for enhanced electrochromic applications

被引:50
作者
Lin, Feng [1 ,3 ]
Gillaspie, Dane T. [1 ]
Dillon, Anne C. [1 ]
Richards, Ryan M. [2 ,3 ]
Engtrakul, Chaiwat [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Colorado Sch Mines, Dept Chem & Geochem, Golden, CO 80401 USA
[3] Colorado Sch Mines, Mat Sci Program, Golden, CO 80401 USA
关键词
Nitrogen-doped nickel oxide; Electrochromic properties; Reversibility; Coloration efficiency; Switching kinetics; Sputtering; PERFORMANCE; ELECTRODES; NIO;
D O I
10.1016/j.tsf.2012.12.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, Ni oxide and nitrogen (N)-doped Ni oxide electrochromic films were fabricated with radio frequency magnetron sputtering from a ceramic Ni oxide target. Nitrogen gas was used as the precursor for N doping. The N dopant resulted in Ni oxide films with decreased lattice parameters, increased degree of crystallinity and enhanced surface roughness. The electrochromic performance of the resulting films was evaluated in a LiClO4 electrolyte dissolved in propylene carbonate. The charge reversibility and coloration efficiency as well as the coloration and bleaching kinetics for the N-doped Ni oxide films were significantly improved relative to the undoped Ni oxide films. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:26 / 30
页数:5
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