Monolithically wavelength-stabilized high power diode lasers

被引：0

作者：

Crump, P. ^{[1
]}

Decker, J. ^{[1
]}

Maassdorf, A. ^{[1
]}

Fricke, J. ^{[1
]}

Brox, O. ^{[1
]}

Wenzel, H. ^{[1
]}

Erbert, G. ^{[1
]}

Traenkle, G. ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2017年

关键词：

Diode laser; broad area laser; distributed feedback laser; monolithic stabilization; conversion efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-based diode lasers that deliver high powers at high efficiencies within a narrow, stable spectral window are in strong demand for applications including solid state laser pumping and direct material processing. Wavelength stabilization can be integrated in the diode laser using surface patterning or etch and regrowth techniques. We review recent performance, focusing on diode lasers with distributed feedback with lasing wavelength of 975 nm. We show that DFB lasers operate with conversion efficiency that is 4 ... 8%-points (1.07x to 1.17x) lower than reference devices, review performance limits and note potential approaches to address these limits.

引用

页码：11 / 12

页数：2

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