Monolithically wavelength-stabilized high power diode lasers

被引：0
|
作者：
Crump, P. [1 ]
Decker, J. [1 ]
Maassdorf, A. [1 ]
Fricke, J. [1 ]
Brox, O. [1 ]
Wenzel, H. [1 ]
Erbert, G. [1 ]
Traenkle, G. [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, D-12489 Berlin, Germany
来源：
PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2017年
关键词：
Diode laser; broad area laser; distributed feedback laser; monolithic stabilization; conversion efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs-based diode lasers that deliver high powers at high efficiencies within a narrow, stable spectral window are in strong demand for applications including solid state laser pumping and direct material processing. Wavelength stabilization can be integrated in the diode laser using surface patterning or etch and regrowth techniques. We review recent performance, focusing on diode lasers with distributed feedback with lasing wavelength of 975 nm. We show that DFB lasers operate with conversion efficiency that is 4 ... 8%-points (1.07x to 1.17x) lower than reference devices, review performance limits and note potential approaches to address these limits.
引用
收藏
页码：11 / 12
页数：2
相关论文
共 50 条
  • [21] Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector
    Paschke, K.
    Blume, G.
    Pohl, J.
    Feise, D.
    Ressel, P.
    Sahm, A.
    Sumpf, B.
    HIGH-POWER DIODE LASER TECHNOLOGY XVIII, 2020, 11262
  • [22] High-power frequency stabilized tapered diode amplifiers at 1064 nm
    Ostendorf, R.
    Schilling, C.
    Kaufel, G.
    Moritz, R.
    Wagner, J.
    Kochem, G.
    Friedmann, P.
    Gilly, J.
    Kelemen, M. T.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII, 2009, 7198
  • [23] Reliable high power diode lasers: thermo-mechanical fatigue aspects
    Klumel, G
    Gridish, Y
    Szafranek, I
    Karni, Y
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [24] High-power diode lasers between 1.8μm and 3.0μm
    Hilzensauer, S.
    Gilly, J.
    Friedmann, P.
    Werner, M.
    Traub, M.
    Patterson, S.
    Neukum, J.
    Kelemen, M. T.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XII, 2013, 8640
  • [25] Packaging of Wavelength Stabilized 976nm 100W 105μm NA 0.15 Fiber Coupled Diode Lasers
    Jiang, Xiaochen
    Liu, Rui
    Gao, Yanyan
    Zhang, Tujia
    He, Xiaoguang
    Zhu, Jing
    Zhang, Qiang
    Yang, Thomas
    Zhang, Cuipeng
    COMPONENTS AND PACKAGING FOR LASER SYSTEMS II, 2016, 9730
  • [26] Iodine-Stabilized 633 nm Diode Lasers for Metrology and Interferometry
    Krause, Florian
    Sterr, Uwe
    Benkler, Erik
    Noelleke, Christian
    Leisching, Patrick
    PROCEEDINGS OF THE 2019 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND EUROPEAN FREQUENCY AND TIME FORUM (EFTF-IFCS 2019), 2019,
  • [27] Multi-Wavelength Interferometry for Length Measurements Using Diode Lasers
    Meiners-Hagen, K.
    Schoedel, R.
    Pollinger, F.
    Abou-Zeid, A.
    MEASUREMENT SCIENCE REVIEW, 2009, 9 (01): : 16 - 26
  • [28] Progress on Wavelength Division Multiplexing Beam Combining Technology for Diode Lasers
    Sun Shujuan
    Guo Linhui
    Tan Hao
    Meng Huicheng
    Ruan Xu
    Yan Xuejing
    Zhang Xuguang
    Wu Deyong
    Gao Songxin
    LASER & OPTOELECTRONICS PROGRESS, 2018, 55 (02)
  • [29] The impact of external optical feedback on the degradation behavior of high-power diode lasers
    Hempel, Martin
    Chi, Mingjun
    Petersen, Paul M.
    Zeimer, Ute
    Weyers, Markus
    Tomm, Jens W.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XI, 2013, 8605
  • [30] Defect Temperature Kinetics during Catastrophic Optical Damage in High Power Diode Lasers
    Hempel, Martin
    Tomm, Jens W.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XIII, 2014, 9002
12345