electrostriction;
anelasticity;
doped ceria;
point defects;
elastic moduli;
ultrasonic time of flight;
nanoindentation;
primary creep;
ORDER PHASE-TRANSITION;
IONIC-CONDUCTIVITY;
POISSON RATIO;
THIN-FILMS;
RELAXATION;
PURE;
D O I:
10.1021/acsami.0c07799
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Electromechanically active ceramic materials, piezoelectrics and electrostrictors, provide the backbone of a variety of consumer technologies. Gd- and Sm-doped ceria are ion conducting ceramics, finding application in fuel cells, oxygen sensors, and, potentially, as memristor materials. While optimal design of ceria-based devices requires a thorough understanding of their mechanical and electromechanical properties, reports of systematic study of the effect of dopant concentration on the electromechanical behavior of ceria-based ceramics are lacking. Here we report the longitudinal electrostriction strain coefficient (M-33) of dense RExCe1-xO2-x/2 (x <= 0.25) ceramic pellets, where RE = Gd or Sm, measured under ambient conditions as a function of dopant concentration within the frequency range f = 0.15-350 Hz and electric field amplitude E <= 0.5 MV/m. For >100 Hz, all ceramic pellets tested, independent of dopant concentration, exhibit longitudinal electrostriction strain coefficient with magnitude on the order of 10(-18) m(2)/V-2. The quasi-static (f < 1 Hz) electrostriction strain coefficient for undoped ceria is comparable in magnitude, while introducing 5 mol % Gd or 5 mol % Sm produces an increase in M-33 by up to 2 orders of magnitude. For x <= 0.1 (Gd)-0.15 (Sm), the Debye-type relaxation time constant (tau) is in the range 60-300 ms. The inverse relationship between dopant concentration and quasi-static electrostrictive strain parallels the anelasticity and ionic conductivity of Gd- and Sm-doped ceria ceramics, indicating that electrostriction is partially governed by ordering of vacancies and changes in local symmetry.