An extremely high dielectric constant in bismuth-based pyrochlore multilayer film capacitors combined with percolative structure

被引：10
作者：
Cuong, Nguyen Duy [1 ]
Ahn, Jun-Ku [1 ]
Park, Kyung-Woo [1 ]
Seong, Nak-Jin [1 ]
Yoon, Soon-Gil [1 ]
机构：
[1] Chungnam Natl Univ, Sch Nano Sci & Technol, Taejon 305764, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期
关键词：
bismuth compounds; leakage currents; magnesium compounds; multilayers; permittivity; platinum; sputter deposition; thin film capacitors;
D O I：
10.1063/1.3013362
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The percolative film capacitor structure of Pt/Bi2Mg2/3Nb4/3O7 [BMN(Ar) films deposited at pure argon atmosphere]/Pt was addressed for achievement of a high dielectric constant in the films deposited at room temperature by radio frequency magnetron sputtering. The deterioration of the leakage current characteristics in the percolative capacitor was mitigated using the multilayer films of BMN(O)/BMN(Ar)/BMN(O), where ultrathin BMN(O) films were deposited at a mixed atmosphere of argon and oxygen. An extremely high dielectric constant of 120 and a low leakage current density of 6x10(-6) A/cm(2) at 3 V were observed in percolative BMN multilayer films as-deposited at room temperature.
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页数：3
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