Influence of the substrate bias voltage on the physical properties of dc reactive sputtered Ta2O5 films

被引：10

作者：

Cang, K. ^{[1
,2
]}

Liang, L. Y. ^{[1
]}

Liu, Z. M. ^{[1
]}

Wu, L. ^{[1
]}

Luo, H. ^{[1
]}

Cao, H. T. ^{[1
]}

Zou, Y. S. ^{[2
]}

机构：

[1] Chinese Acad Sci, Div Funct Mat & Nano Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 550卷

基金：

中国国家自然科学基金;

关键词：

Ta2O5 dielectric films; Magnetron sputtering; Spectroscopic ellipsometer; Dielectric loss; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; DIELECTRIC-PROPERTIES; CONDUCTION; MICROSTRUCTURE; SILICON; OXIDES; MECHANISM;

D O I：

10.1016/j.jallcom.2012.09.134

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tantalum oxide (Ta2O5) films were deposited on ITO glass substrates by dc reactive magnetron sputtering in oxygen/argon gas mixture. The performance of Ta2O5 films deposited at different substrate bias voltages in the range from 0 to -145 V was investigated in detail. Our results show a decrease both in the film porosity and the surface roughness as the substrate bias voltage changes within a certain scope, which interestingly leads to a conspicuous improvement of their electrical properties. Further increasing of the negative bias voltage, however, results in deterioration of the film packing density, surface morphology, and leakage current as well. Under the optimal substrate biasing condition (-135 V), the Ta2O5 films exhibit attractive electrical properties, namely a permittivity value as high as similar to 23, a dielectric loss of similar to 0.01, and a leakage current density as low as 1.45 x 10(-7) A/cm(2) at 1 MV/cm. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.

引用

页码：258 / 262

页数：5

共 45 条

[1] Nitrogen plasma annealing for low temperature Ta2O5 films [J].