Effect of Coupled Double-Quantum-Well Design on Pump-Induced Refractive-Index Change in AlAsSb-InGaAs-AlAs Optical Waveguides

被引：1
作者：
Lim, C. G. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Network Photon Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 11-12期
关键词：
Coupled double-quantum-well; free-carrier mass dispersion; refractive-index change;
D O I：
10.1109/JQE.2008.2001930
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optimization of the AlAsSb-InGaAs-AlAs coupled double-quantum-wells in optical waveguide core for optimal pump-induced refractive-index change indicates that thin AlAs center barrier leads to larger refractive-index change, and the InGaAs double-quantum-wells have an optimum thickness of which maximum refractive-index change is obtained. Analysis shows that the cross phase-modulation efficiency of these optical waveguides is highly dependent on optical confinement and is limited to approximately 0.05 rad/pJ in the 1550 nm region as far as the cross phase-modulation based on free-carrier mass dispersion effect is concerned.
引用
收藏
页码：1003 / 1008
页数：6
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