Adsorption Model of Organic Molecules on the Surface of Thermally Oxidized Silicon

被引：4

作者：

Sato, Nobuyoshi ^{[1
]}

Shimogaki, Yukihiro ^{[2
]}

机构：

[1] Toshiba Corp Semicond Co, Adv Memory Dev Ctr, Yokaichi 5128550, Japan

[2] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 04期

关键词：

ATOMIC LAYER DEPOSITION; ATMOSPHERIC-PRESSURE; SI SURFACES; OXIDE-FILMS; CHEMICAL OXIDES; BASE MATERIALS; GROWTH; CONTAMINATION; REMOVAL; WATER;

D O I：

10.1149/2.015204jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ethanol adsorbed on the surface of a thermally grown oxide was analyzed using X-ray photoelectron spectroscopy (XPS) analysis and contact angle measurements. Ethanol is slightly adsorbed and then easily desorbed by post baking on as-grown thermal oxide, while the ethanol adsorbed on the thermal oxide after pre baking is not desorbed by post baking. More ethanol molecules are adsorbed on a chemical oxide than on a thermal oxide. When the thermal oxide is slightly etched, more ethanol is adsorbed. OH groups may not presence on as-thermally-grown oxide, but will be generated by etching the surface of the thermal oxide. The relative amount of OH groups on the various surfaces of the thermal oxide was discussed. (C) 2012 The Electrochemical Society.

引用

页码：N61 / N66

页数：6

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