Interaction of n-type dopants with oxygen in silicon and germanium

被引：10

作者：

Chroneos, A. ^{[1
]}

Sgourou, E. N. ^{[2
]}

Londos, C. A. ^{[2
]}

机构：

[1] Open Univ, Milton Keynes MK7 6AA, Bucks, England

[2] Univ Athens, Solid State Phys Sect, Athens 15784, Greece

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 07期

关键词：

DIFFUSION; DEFECTS;

D O I：

10.1063/1.4757406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Density functional theory calculations are employed to gain a fundamental insight on the interaction of n-type dopants such as phosphorous and arsenic with oxygen interstitials and A-centers (vacancy-oxygen interstitial pairs) in silicon and germanium. We propose the formation of the phosphorous-vacancy-oxygen interstitial and arsenic-vacancy-oxygen interstitial cluster in both silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757406]

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页数：3

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共 29 条

[1] Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions [J].

Bracht, H ;

Stolwijk, NA ;

Mehrer, H .

PHYSICAL REVIEW B, 1995, 52 (23) :16542-16560

[2] The vacancy in silicon: A critical evaluation of experimental and theoretical results [J].

Bracht, Hartmut ;

Chroneos, Alexander .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)

[3] Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results [J].

Brotzmann, S. ;

Bracht, H. ;

Hansen, J. Lundsgaard ;

Larsen, A. Nylandsted ;

Simoen, E. ;

Haller, E. E. ;

Christensen, J. S. ;

Werner, P. .

PHYSICAL REVIEW B, 2008, 77 (23)

[4] Point defect engineering strategies to suppress A-center formation in silicon [J].

Chroneos, A. ;

Londos, C. A. ;

Sgourou, E. N. ;

Pochet, P. .

APPLIED PHYSICS LETTERS, 2011, 99 (24)

[5] Effect of carbon on dopant-vacancy pair stability in germanium [J].

Chroneos, A. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (09)

[6] A-centers and isovalent impurities in germanium: Density functional theory calculations [J].

Chroneos, A. ;

Londos, C. A. ;

Bracht, H. .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (05) :453-457

[7] Interaction of A-centers with isovalent impurities in silicon [J].

Chroneos, A. ;

Londos, C. A. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)

[8] Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium [J].

Chroneos, A. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (05)

[9] Carbon, dopant, and vacancy interactions in germanium [J].

Chroneos, A. ;

Uberuaga, B. P. ;

Grimes, R. W. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)

[10] Vacancy-arsenic clusters in germanium [J].

Chroneos, A. ;

Grimes, R. W. ;

Uberuaga, B. P. ;

Brotzmann, S. ;

Bracht, H. .

APPLIED PHYSICS LETTERS, 2007, 91 (19)