Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

被引：45

作者：

Younis, Adnan ^{[1
]}

Chu, Dewei ^{[1
]}

Li, Sean ^{[1
]}

机构：

[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

NANOSCALE RESEARCH LETTERS | 2013年 / 8卷

基金：

澳大利亚研究理事会;

关键词：

Electrodeposition; Nanostructure; Resistive switching; OXIDE-FILMS; MEMORY; RESISTANCE;

D O I：

10.1186/1556-276X-8-154

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High R (OFF)/R (ON) ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.

引用

页码：1 / 6

页数：6

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