Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode

被引：11

作者：

Fang, H. ^{[1
]}

Sang, L. W. ^{[1
]}

Zhao, L. B. ^{[1
]}

Qi, S. L. ^{[1
]}

Zhang, Y. Z. ^{[1
]}

Yang, X. L. ^{[1
]}

Yang, Z. J. ^{[1
]}

Zhang, G. Y. ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

基金：

中国国家自然科学基金;

关键词：

cathodoluminescence; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; scanning electron microscopy; wide band gap semiconductors;

D O I：

10.1063/1.3063044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A kind of phosphor-free GaN based white light-emitting diode was fabricated with a strain adjusting InGaN interlayer. The origin of the strain adjusted white luminescent properties was studied with cathodoluminescence, asymmetrically reciprocal space mapping with high resolution x-ray diffraction, and scanning electron microscopy. The yellow and blue components of the electroluminescence spectrum were attributed to the high indium core and the adjacent indium depleted region in the inverted pyramidal pits on the device surface, respectively. These pits existed at the end of the dislocations induced by the strain relaxation process of the InGaN interlayer.

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页数：3

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