Ga and As competition for thiolate formation at p-GaAs(111) surfaces

被引：12

作者：

Preda, Loredana ^{[1
]}

Negrila, Catalin ^{[2
]}

Lazarescu, Mihail F. ^{[2
]}

Enache, Mirela ^{[1
]}

Anastasescu, Mihai ^{[1
]}

Toader, Ana M. ^{[1
]}

Ionescu, Sorana ^{[3
]}

Lazarescu, Valentina ^{[1
]}

机构：

[1] Inst Phys Chem Ilie Murgulescu, RO-060041 Bucharest, Romania

[2] Natl Inst Mat Phys, RO-77125 Bucharest, Romania

[3] Univ Bucharest, RO-70346 Bucharest, Romania

来源：

ELECTROCHIMICA ACTA | 2013年 / 104卷

关键词：

GaAs(111); 4,4 '-Thio-bis-benzene-thiolate (TBBT); EIS; XPS; SELF-ASSEMBLED MONOLAYERS; SCANNING-TUNNELING-MICROSCOPY; BARE SEMICONDUCTOR SURFACES; GALLIUM-ARSENIDE; N-GAAS; 2ND-HARMONIC GENERATION; IMPEDANCE SPECTROSCOPY; STRUCTURAL-CHARACTERIZATION; PHOTOELECTRON-SPECTROSCOPY; ELECTROLYTE JUNCTIONS;

D O I：

10.1016/j.electacta.2013.04.077

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Self-assembled layers of 4,4'-thio-bis-benzene-thiolate spontaneously adsorbed on p-doped GaAs(1 1 1)A and GaAs(1 1 1)B electrodes were examined by EIS, XPS, and AFM investigations. XPS data provide evidence that (i) both As and Ga atoms are involved in the thiolate formation no matter which one is prevailing on the semiconducting surface and (ii) only one of the two thiol groups participates in the chemisorption bond. EIS and AFM results point to a more stable thiolate layer formed on the As-terminated surface than that formed on the Ga-terminated surface due to stronger self-assembling effects developed between the adsorbed species. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1 / 11

页数：11

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