Metalorganic chemical vapor deposition study using tertiarybutylphosphine and tertiarybutylarsine for InAlGap light-emitting diode fabrication

We have investigated the possibility of using tertiarybutylphosphine (TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containing materials through InAlGaP light-emitting diode (LED) fabrication. It has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In-0.5(Al0.7Ga0.3)(0.5)P cladding layer can be enhanced by increasing interstitial soup-III, I-III. According to our growth model, an intrinsic disadvantage of TBP is that it decomposes at a temperature much lower than the substrate temperature and produces less-active phosphorus molecules (P-4). Since the vapor pressure of P-4 is extremely high, it leads to lower effective V/III ratios on the growth surface and generation of I-III. In order to increase the effective V/III ratio, we have proposed new organic phosphorus sources that are expected to provide a large number of PHx (x = 0-2) radicals on the surface.