The Study of the Geometry and Growth Trend of Silicon Carbide Crystals

被引：0
作者：
Fong, F. J.
Chen, W. Y.
Tsao, S.
Hsao, T. C.
Huang, C. F.
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
Silicon carbide; electron beam furnace; polytypes; PHASE EPITAXY; SI;
D O I：
10.4028/www.scientific.net/MSF.740-742.56
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The study compared the influences of silicon materials from different sources on the crystal growth process and geometry of silicon carbide (SiC). As revealed by the results of the study, although the purity of commercial silicon material was as high as 11N, the rate of crystal growth was slow. However, if silicon material made from electron-beam refined metallurgical silicon was utilized for the SiC crystal growth experiment, the morphology of the SiC crystal was better and the rate of crystal growth was faster despite its purity being only about 4.5N.
引用
收藏
页码：56 / 59
页数：4
相关论文
共 22 条
  • [1] Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy
    Capano, M. A.
    Kim, B. C.
    Smith, A. R.
    Kvam, E. P.
    Tsoi, S.
    Ramdas, A. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
  • [2] On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment
    Epelbaum, BM
    Hofmann, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) : 1 - 5
  • [3] Fong F.J., 2010, CSSC4, VCSSC4, P41
  • [4] Gillessen K., 2010, MATER SCI FORUM, V33, P330
  • [5] LPE Growth of Low Doped n-type 4H-SiC Layer on on-axis Substrate for Power Device Application
    Hattori, R.
    Kamei, K.
    Kusunoki, K.
    Yashiro, N.
    Shimosaki, S.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 141 - 144
  • [6] Itoh A, 1997, PHYS STATUS SOLIDI A, V162, P389, DOI 10.1002/1521-396X(199707)162:1<389::AID-PSSA389>3.0.CO
  • [7] 2-X
  • [8] Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution
    Kamei, K.
    Kusunoki, K.
    Yashiro, N.
    Okada, N.
    Moriguchi, K.
    Daikoku, H.
    Kado, M.
    Suzuki, H.
    Sakamoto, H.
    Bessho, T.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 45 - +
  • [9] Knippenberg W.E., 1963, PHILIPS RES REP, V18, pL625
  • [10] A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates
    Marinoya, Maya
    Mercier, Frederic
    Mantzari, Alkioni
    Galben, Irina
    Chaussende, Didier
    Polychroniadis, Efstathios K.
    [J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4749 - 4751
123