Epitaxial growth theory: Vapor-phase and surface chemistry

被引:13
作者
Cavallotti, C [1 ]
Masi, M [1 ]
机构
[1] Politecn Milan, Dipartimento Chim Fis Applicata, I-20133 Milan, Italy
来源
SILICON EPITAXY | 2001年 / 72卷 / 0C期
关键词
D O I
10.1016/S0080-8784(01)80180-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:51 / 88
页数:38
相关论文
共 87 条
[1]   Modeling and analysis of the silicon epitaxial growth with SiHCl3 in a horizontal rapid thermal chemical vapor deposition reactor [J].
Angermeier, D ;
Monna, R ;
Slaoui, A ;
Muller, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) :3256-3261
[2]  
[Anonymous], 1993, UNIMOL PROGRAM SUITE
[3]  
[Anonymous], 1990, SAND878215B
[4]  
[Anonymous], CHEM KINETICS DYNAMI
[5]   REACTION OF H-ATOMS WITH SOME SILANES AND DISILANES - RATE CONSTANTS AND ARRHENIUS PARAMETERS [J].
ARTHUR, NL ;
POTZINGER, P ;
REIMANN, B ;
STEENBERGEN, HP .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1989, 85 :1447-1463
[6]  
BAULCH DL, 1981, J PHYS CHEM REF DATA, V10, P1
[7]   ESDIAD STUDIES OF FLUORINE AND CHLORINE ADSORPTION AT SI(100) [J].
BENNETT, SL ;
GREENWOOD, CL ;
WILLIAMS, EM .
SURFACE SCIENCE, 1993, 290 (03) :267-276
[8]  
Benson S.W., 1968, THERMOCHEMICAL KINET
[9]  
BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147
[10]  
Boudart M., 2014, KINETICS HETEROGENEO