Polarization fatigue in antiferroelectric (Pb,La)(Zr,Ti)O3 thin films: The role of the effective strength of driving waveform

被引:6
作者
Geng, Wenping [1 ,2 ,3 ]
Liu, Yang [2 ,3 ,4 ]
Lou, Xiaojie [2 ,3 ]
Zhang, Fuping [5 ]
Liu, Qida [6 ]
Dkhil, Brahim [4 ]
Zhang, Ming [2 ,3 ]
Ren, Xiaobing [2 ,3 ]
He, Hongliang [5 ]
Jiang, Anquan [1 ]
机构
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol, Multidisciplinary Mat Res Ctr, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
[4] Ecole Cent Paris, Lab Struct Proprietes & Modelisat Solides, UMR 8580, CNRS, F-92295 Chatenay Malabry, France
[5] CAEP, Nat Key Lab Shock Wave & Detonat Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China
[6] Xi An Jiao Tong Univ, State Key Lab Strength & Vibrat Mech Struct, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Sol-gel processes; Thin films; Electronic properties; ELECTRIC FATIGUE; SN; BEHAVIOR; CAPACITORS; CERAMICS; PB;
D O I
10.1016/j.ceramint.2015.03.265
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, a critical parameter termed as "effective electric strength" is developed to depict polarization fatigue in antiferroelectric thin films. Specifically, the effect of pulse width, frequency, and magnitude of driving voltage (or field) on polarization fatigue of antiferroelectric (Pb,La) (Zr,Ti)O-3 (PLZT) thin films was investigated in detail. By transforming all the waveforms with different pulse-widths/voltages/frequencies into their effective electric strength, a strong correlation between the effective strength and the degree of polarization fatigue in the PLZT films is revealed. For instance, it was found that appreciable fatigue usually occurs when the effective strength is larger than or equal to the voltage of phase transition from antiferroelectric phase to ferroelectric phase. In addition, it is shown that the films are more prone to fatigue for a lower frequency of the same effective strength. Our findings could be well explained in the framework of the local phase decomposition arising from switching induced charge injection. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:S289 / S295
页数:7
相关论文
共 30 条
  • [1] Bharadwaja SSN, 2001, FERROELECTRICS, V263, P1339
  • [2] Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes
    Colla, EL
    Taylor, DV
    Tagantsev, AK
    Setter, N
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2478 - 2480
  • [3] Enhanced polarization switching and energy storage properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with LaNiO3 oxide top electrodes
    Ge, Jun
    Dong, Xianlin
    Chen, Ying
    Cao, Fei
    Wang, Genshui
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (14)
  • [4] Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O3 antiferroelectric thin films
    Geng, Wenping
    Lou, Xiaojie
    Xu, Jianghong
    Zhang, Fuping
    Liu, Yang
    Dkhil, Brahim
    Ren, Xiaobing
    Zhang, Ming
    He, Hongliang
    [J]. CERAMICS INTERNATIONAL, 2015, 41 (01) : 109 - 114
  • [5] A comprehensive review on the progress of lead zirconate-based antiferroelectric materials
    Hao, Xihong
    Zhai, Jiwei
    Kong, Ling Bing
    Xu, Zhengkui
    [J]. PROGRESS IN MATERIALS SCIENCE, 2014, 63 : 1 - 57
  • [6] Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thick films
    Hao, Xihong
    Wang, Ying
    Zhang, Le
    Zhang, Liwen
    An, Shengli
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (16)
  • [7] Electric fatigue Behavior of la-doped Pb(Zr, sn, TO)O3 antiferroelectric ceramics under square electric pulse power
    Hu, Yuan-Yuan
    Feng, Yu-Jun
    Xia, Song
    Xu, Zhuo
    Yao, Xi
    [J]. FERROELECTRICS, 2007, 355 : 125 - 129
  • [8] Electric fatigue in sol-gel prepared Pb, Zr, Sn, Ti NbO3 thin films
    Jang, JH
    Yoon, KH
    Shin, HJ
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1823 - 1825
  • [9] Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films
    Jiang, A. Q.
    Lin, Y. Y.
    Tang, T. A.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [10] Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films
    Jiang, A. Q.
    Lin, Y. Y.
    Tang, T. A.
    Zhang, Q.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (14)