Advantage of tapered and graded AlGaN electron blocking layer in InGaN-based blue laser diodes

被引：18
作者：
Yang, Wei [1 ]
Li, Ding [1 ]
He, Juan [1 ]
Hu, Xiaodong [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期
关键词：
laser diodes; transfer matrix method; electron overflow; hole injection;
D O I：
10.1002/pssc.201200637
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the advantage of tapered and graded AlGaN electron blocking layer (EBL) in InGaN-based blue laser diodes (LDs) theoretically by self-consistent Schrodinger-Poisson method together with transfer matrix method. Such optimized EBLs was found to suppress electron leakage current as well as enhance hole injection compared to their conventional counterpart. More uniform carrier distribution and thus uniform local gain profile is obtained in the active region of LDs with optimized EBLs. Slightly enhancement of optical confinement factor is also obtained. As a result, LDs with new EBL structure demonstrate better device performance with decrease of threshold current density and increase of light output power. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：346 / 349
页数：4
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