Advantage of tapered and graded AlGaN electron blocking layer in InGaN-based blue laser diodes

被引：15
作者：
Yang, Wei [1 ]
Li, Ding [1 ]
He, Juan [1 ]
Hu, Xiaodong [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期
关键词：
laser diodes; transfer matrix method; electron overflow; hole injection;
D O I：
10.1002/pssc.201200637
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the advantage of tapered and graded AlGaN electron blocking layer (EBL) in InGaN-based blue laser diodes (LDs) theoretically by self-consistent Schrodinger-Poisson method together with transfer matrix method. Such optimized EBLs was found to suppress electron leakage current as well as enhance hole injection compared to their conventional counterpart. More uniform carrier distribution and thus uniform local gain profile is obtained in the active region of LDs with optimized EBLs. Slightly enhancement of optical confinement factor is also obtained. As a result, LDs with new EBL structure demonstrate better device performance with decrease of threshold current density and increase of light output power. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：346 / 349
页数：4
相关论文
共 50 条
  • [11] AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers
    Khan, Sajid Ullah
    Yao, Wang
    Zhang Aoxiang
    Nawaz, Sharif Muhammad
    Niass, Mussaab Ibrahim
    Wang, Fang
    Liu, Yuhuai
    JOURNAL OF RUSSIAN LASER RESEARCH, 2022, 43 (06) : 694 - 701
  • [12] Long-term degradation of InGaN-based laser diodes: Role of defects
    Monti, D.
    Meneghini, M.
    De Santi, C.
    Meneghesso, G.
    Zanoni, E.
    Bojarska, A.
    Perlin, P.
    MICROELECTRONICS RELIABILITY, 2017, 76 : 584 - 587
  • [13] Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer
    Yi An Yin
    Naiyin Wang
    Shuti Li
    Yong Zhang
    Guanghan Fan
    Applied Physics A, 2015, 119 : 41 - 44
  • [14] Short cavity InGaN-based laser diodes with cavity length below 300 μm
    Zhang, Hezhi
    Shih, Ching-Wen
    Martin, Denis
    Caut, Alexander
    Carlin, Jean-Francois
    Butte, Raphael
    Grandjean, Nicolas
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (08)
  • [15] Efficient Carrier Confinement in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with a Composition-Graded Electron-Blocking Layer
    Ye, Wei-Te
    Cheng, Zai-Jun
    Ren, Zhi-Yu
    Li, Chen
    Zheng, Jin-Jian
    Gao, Mo-Ran
    Cai, Li-E
    Yang, Yu-Lin
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (02):
  • [16] Numerical simulation of 405-nm InGaN laser diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer
    Kuo, Yen-Kuang
    Lu, Ying-Chung
    Tsai, Miao-Chan
    Yen, Sheng-Horng
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XVII, 2009, 7211
  • [17] Performance improvements in InGaN/GaN light-emitting diodes using electron blocking layer with V-shaped graded Al composition
    Chung, Ho Young
    Kim, Su Jin
    Kim, Tae Geun
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 75 : 390 - 397
  • [18] Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
    So, Byeongchan
    Kim, Jinwan
    Kwak, Taemyung
    Kim, Taeyoung
    Lee, Joohyoung
    Choi, Uiho
    Nam, Okhyun
    RSC ADVANCES, 2018, 8 (62): : 35528 - 35533
  • [19] The critical impact of the waveguide thickness on the optical and threshold behaviors of InGaN-based green laser diodes
    Li S.
    Chen H.
    Lei M.
    Yu G.
    Meng L.
    Zong H.
    Jiang S.
    Fu J.
    Wen P.
    Khan M.S.A.
    Hu X.
    Optik, 2023, 289
  • [20] AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers
    Wei, Shiqin
    Xu, Qiuchen
    Li, Yunyi
    Xu, Yuan
    Wang, Fang
    Liou, Juin J.
    Liu, Yuhuai
    JOURNAL OF RUSSIAN LASER RESEARCH, 2022, 43 (06) : 678 - 685
12345