Monte Carlo study of electron transport in strained silicon inversion layers

被引：0

作者：

Ungersboeck, E. ^{[1
]}

Kosina, H. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Mikroelektron, TU Wien, A-1040 Vienna, Austria

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2006年 / 5卷 / 2-3期

关键词：

Monte Carlo simulation; Degeneracy effects; Strain; Mobility enhancement;

D O I：

10.1007/s10825-006-8823-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of degeneracy both on the phonon-limited mobility and the effective mobility including surface-roughness scattering in unstrained and biaxially tensile strained Si inversion layers is analyzed. We introduce a new method for the inclusion of the Pauli principle in a Monte Carlo algorithm. We show that incidentally degeneracy has a minor effect on the bulk effective mobility, despite non- degenerate statistics yields unphysical subband populations and an underestimation of the mean electron energy. The effective mobility of strained inversion layers slightly increases at high inversion layer concentrations when taking into account degenerate statistics.

引用

页码：79 / 83

页数：5

共 14 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] MONTE-CARLO HIGH-FIELD TRANSPORT IN DEGENERATE GAAS [J].

BOSI, S ;

JACOBONI, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02) :315-319

[3] Six-band k•p calculation of the hole mobility in silicon inversion layers:: Dependence on surface orientation, strain, and silicon thickness [J].

Fischetti, MV ;

Ren, Z ;

Solomon, PM ;

Yang, M ;

Rim, K .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :1079-1095

[4] On the enhanced electron mobility in strained-silicon inversion layers [J].

Fischetti, MV ;

Gámiz, F ;

Hänsch, W .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7320-7324

[5] Carrier mobility enhancement in strained Si-On-Insulator fabricated by wafer bonding [J].

Huang, LJ ;

Chu, JO ;

Goma, S ;

D'Emic, CP ;

Koester, SJ ;

Canaperi, DF ;

Mooney, PM ;

Cordes, SA ;

Speidell, JL ;

Anderson, RM ;

Wong, HSP .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :57-58

[6] SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS [J].

JUNGEMANN, C ;

EMUNDS, A ;

ENGL, WL .

SOLID-STATE ELECTRONICS, 1993, 36 (11) :1529-1540

[7] Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs [J].

Rim, K ;

Chu, J ;

Chen, H ;

Jenkins, KA ;

Kanarsky, T ;

Lee, K ;

Mocuta, A ;

Zhu, H ;

Roy, R ;

Newbury, J ;

Ott, J ;

Petrarca, K ;

Mooney, P ;

Lacey, D ;

Koester, S ;

Chan, K ;

Boyd, D ;

Leong, M ;

Wong, HS .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :98-99

[8] MOBILITY OF ELECTRONS IN A QUANTIZED SILICON INVERSION LAYER DUE TO PHONON-SCATTERING [J].

ROYCHOUDHURY, D ;

BASU, PK .

PHYSICAL REVIEW B, 1980, 22 (12) :6325-6329

[9]

Sugii N., 2001, Int. Electron Device Meeting Technical Digest, P737

[10] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION [J].

TAKAGI, S ;

TORIUMI, A ;

IWASE, M ;

TANGO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2357-2362

← 1 2 →